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Temperature dependence of absorption spectra of p-type GaP

Mohamed Mounir ; Department of Physics, Faculty of Science, Cairo University, Egypt
Leila S. Balloomal ; Department of Physics, Faculty of Science, Cairo University, Egypt


Puni tekst: engleski pdf 4.218 Kb

str. 379-386

preuzimanja: 77

citiraj


Sažetak

The theoretical analysis of the optical absorption due to band-impurity (impurity-band) electron transitions involving deep impurity levels in semiconductors is considered. Also absorption spectra of GaP, was observed at room temperature and the results were found to be in agreement with the theoretical results if the electron-phonon interaction is taken into consideration.

Ključne riječi

Hrčak ID:

331729

URI

https://hrcak.srce.hr/331729

Datum izdavanja:

4.12.1989.

Podaci na drugim jezicima: hrvatski

Posjeta: 381 *