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Characteristics of electron-beam evaporated GaAs films

Darwish Abdelhady ; Mathematical and Physical Engineering Department, Faculty of Engineering, Ain-Shams University, Abbasia, Cairo, Egypt
Aly Y. Morsy ; Physics Department, Faculty of Education, Ain-Shams University, Heliopolis, Cairo, Egypt
Ahmed A. Atta ; Physics Department, Faculty of Education, Ain-Shams University, Heliopolis, Cairo, Egypt

Sažetak

Thin films of polycrystalline GaAs were prepared using electron-beam evaporation technique. The optical constants, determined from the measured transmittance and reflectance at normal incidence of light, have values in good agreement with those determined for GaAs prepared by other techniques. The film exhibit an interband direct optical transition with energy gap Edq = 1.4 eV. The high-frequency dielectric constant, calculated by two different methods was found 12.255 and 10.91 in close agreement with published data. The thermal activation energy determined from the temperature dependence of the electrical resistivity approximates the bulk value. Current-voltage measurements in the non-ohmic region showed that a space-charge limited conduction begins at 5 V and extends to high values of the applied voltage on increasing the temperature. Poole-Frenkel effect predominates the voltage range 26 V-100 V at 444 K.

Ključne riječi

Hrčak ID:

331798

URI

https://hrcak.srce.hr/331798

Datum izdavanja:

8.4.1991.

Podaci na drugim jezicima: hrvatski

Posjeta: 388 *