Izvorni znanstveni članak
Study of lattice defects in quenched and irradiated GaAs single-crystals
S, Marić
; Institute of Physics, Faculty of Science, Sarajevo
M. Stojić
; "Boris Kidrič" Institute of Nuclear Sciences, Belgrade
Sažetak
Thermal defects as well as neutron and Co60 gamma rays induced defects have been studied in n-type and p-type GaAs. Three annealing stages have been revealed. Stage I (260-320°C), which is present only in the irradiated specimens, is assigned to the motion of intrinsic defects. Stage II (around 400°C) is discussed as impurity-defect complexes disintegration. The defects making complexes with impurites which are mobile even at room temperature, probably vacancies of Ga, are negatively charged in n-type GaAs. In p-type GaAs their charge state is dependent on the Fermi level position being negative at room temperature and positive above 500°C. Stage III (450-530°C) present in quenched and irradiated n-type and p-type GaAs is explained as the annealing of clusters of defects. The defects induced by quenching, neutrons and Co60 gamma rays, which are stable up to 200°C, are similar to each other.
Ključne riječi
Hrčak ID:
328262
URI
Datum izdavanja:
1.9.1982.
Posjeta: 358 *