Sažetak sa skupa
Photoluminescence and absorption edge of the amorphous semiconducting system Ge₂₀As₁₄(SₓSe₁₋ₓ)₅₂I₁₄
M. I. Avramov
; Institute of Physics, Faculty of Sciences, University of Novi Sad
D. M. Petrović
; Institute of Physics, Faculty of Sciences, University of Novi Sad
O. V. Khiminets
; Department of Microelectronics, State University, Uzhgorod, USSR
V. V. Khiminets
; Department of Microelectronics, State University, Uzhgorod, USSR
Sažetak
Depending on the concentration of sulphur (selenium), the absorption edge of the amorphous semiconducting system Ge₂₀As₁₄(SₓSe₁₋ₓ)₅₂I₁₄ is substantially shifted, which is due to the change in the optical energy gap. At the same time, the photoluminescence maximum is also shifted. Changes of both effects exhibit a linear dependence, suggesting the type of structural units of the glass is preserved when sulphur is being replaced with selenium. A comparison of photoluminescence spectra of the binary (As₂S₃, As₂Se₃, GeSe₂) and ternary (AsSeI, AsSI) compounds suggests the presence of the same basic structural units in the four-component system. In addition, the mechanism of photoluminescence capture is discussed.
Ključne riječi
Hrčak ID:
339604
URI
Datum izdavanja:
20.12.1989.
Posjeta: 134 *