Meeting abstract

Defects in semi-insulating gallium arsenide

U. V. Desnica ; R. Bošković Institute, P.O. Box 1016, 41001 Zagreb

Abstract

Defects in semi-insulating gallium arsenide are reviewed, especially those contributing to compensation between donors and acceptors, which are responsible for the very high electrical resistivity of the material. Compensation mechanism – fine balance between native deep donors, called EL2, shallow acceptors (C, Zn, Be, etc.) and shallow donors (Si, Te, Se, etc.) – is discussed in detail. Special emphasis is put on two subjects: a) carbon as an impurity in GaAs, which is believed to be the most important shallow impurity, and b) extrinsic and intrinsic defects (yet unidentified) introducing deep traps in the forbidden energy gap of GaAs, which not only contribute to the donor-acceptor balance but also strongly influence some important opto-electronic properties of SI GaAs (photosensitivity, spectral photoconductive response, persistent photocurrents, etc.).

Keywords

Hrčak ID:

339606

URI

https://hrcak.srce.hr/339606

Publication date:

20.12.1989.

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