Sažetak sa skupa
The two-dimensional analysis of the distribution of charged carriers in an Al-GaAs n⁺–n–n⁻ heterogeneous structure under the influence of the external electric field
R. Ramović
; Faculty of Electrical Engineering, Beograd
A. Guljaš
; Factory of equipment and plants, Kneževo
D. Indin
; Faculty of Electrical Engineering, Beograd
Z. Ristovski
; Faculty of Electrical Engineering, Beograd
Sažetak
Starting from the basic equations for describing the phenomena in the electron transport processes in solid states /1/, /2/, the two-dimensional mathematical-physical model was proposed and used for numerical calculations of the distribution of charged carriers. A heterogeneous structure on the basis of Al-GaAs, where the layer GaAs is unevenly doped from intrinsic to very large concentration of impurities, was studied.
Ključne riječi
Hrčak ID:
339839
URI
Datum izdavanja:
20.12.1989.
Posjeta: 147 *