Sažetak sa skupa
Defects investigation in photo-CVD silicon nitride films
G. Nikolić
; Ei-Mikroelektronika, Bul. Veljka Vlahovića 80-82, 18000 Niš, Yugoslavia
Sažetak
ESR and UV/visible spectroscopy were used for defects investigation in silicon nitride thin films prepared by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using SiH₄ and NH₃ gas mixtures. For the films deposited at 250 °C ESR signal and optical absorption behavior with varying NH₃/SiH₄ flow rate ratio is shown to be basically similar to that observed in PECVD silicon nitride films.
Ključne riječi
Hrčak ID:
339889
URI
Datum izdavanja:
20.12.1989.
Posjeta: 150 *