Sažetak sa skupa
An analysis of applicability of linear screening theory in doped silicon
T. Tošić
; Faculty of Electronic Engineering, Niš
D. Tjapkin
; Faculty of Electrical Engineering, Beograd
M. Jevtić
; Institute for Chemistry, Technology and Metallurgy, Njegoševa 12, Beograd
Sažetak
Investigation of doped semiconductor characteristics generally uses the linear screening theory of particular scattering centers based on the possibility of the Poisson's equation linearization. This paper checks the correctness of the applicability of this theory to a doped noncompensated Si. It is concluded that the linearization may be applied in the region of light doping while at higher impurity concentration one should take care of the nonlinear screening.
Ključne riječi
Hrčak ID:
340686
URI
Datum izdavanja:
15.12.1980.
Posjeta: 171 *