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https://doi.org/10.7305/automatika.53-2.178

A Review of Si MOS-gated Power Switches and PiN Rectifiers

José Rebollo ; Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Ignasi Cortés ; Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Xavier Perpiñà   ORCID icon orcid.org/0000-0001-5946-5580 ; Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
José Millán ; Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain

Puni tekst: engleski, pdf (2 MB) str. 117-127 preuzimanja: 2.453* citiraj
APA 6th Edition
Rebollo, J., Cortés, I., Perpiñà, X. i Millán, J. (2012). A Review of Si MOS-gated Power Switches and PiN Rectifiers. Automatika, 53 (2), 117-127. https://doi.org/10.7305/automatika.53-2.178
MLA 8th Edition
Rebollo, José, et al. "A Review of Si MOS-gated Power Switches and PiN Rectifiers." Automatika, vol. 53, br. 2, 2012, str. 117-127. https://doi.org/10.7305/automatika.53-2.178. Citirano 27.11.2021.
Chicago 17th Edition
Rebollo, José, Ignasi Cortés, Xavier Perpiñà i José Millán. "A Review of Si MOS-gated Power Switches and PiN Rectifiers." Automatika 53, br. 2 (2012): 117-127. https://doi.org/10.7305/automatika.53-2.178
Harvard
Rebollo, J., et al. (2012). 'A Review of Si MOS-gated Power Switches and PiN Rectifiers', Automatika, 53(2), str. 117-127. https://doi.org/10.7305/automatika.53-2.178
Vancouver
Rebollo J, Cortés I, Perpiñà X, Millán J. A Review of Si MOS-gated Power Switches and PiN Rectifiers. Automatika [Internet]. 2012 [pristupljeno 27.11.2021.];53(2):117-127. https://doi.org/10.7305/automatika.53-2.178
IEEE
J. Rebollo, I. Cortés, X. Perpiñà i J. Millán, "A Review of Si MOS-gated Power Switches and PiN Rectifiers", Automatika, vol.53, br. 2, str. 117-127, 2012. [Online]. https://doi.org/10.7305/automatika.53-2.178

Sažetak
Revolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices’ technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.

Ključne riječi
MOS-gated power devices; power MOSFETs; CoolMOS; super-junction devices; IGBTs; PiN rectifiers

Hrčak ID: 84010

URI
https://hrcak.srce.hr/84010

[hrvatski]

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