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Pb/Si(111)1×1-H Schottky barrier height

Jozef Osvald ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 842 39 Bratislava, Slovakia
Karol Hricovini ; Laboratoire pour l'Utilisation du Rayonnement Electromagnetique, Centre Universitaire Paris-Sud, Bat. 209 D, F-91405 Orsay Cedex, France
Guy Le Lay ; Centre de Recherche sur les M\' ecanismes de la Croissance Cristalline - Centre National de la Recherche Scientifique, Campus Luminy, Case 913, F-13288 Marseille Cedex 09, France
Viktor Yu Aristov ; Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr., Russia, 142432

Sažetak

We studied Schottky barrier height of lead on n- and p-type ideally terminated Si(111)1×1-H unreconstructed surface by electrical measurements and X-ray photoelectron spectroscopy (XPS). The hydrogenation of the Si(111) surface was done by means of wet etching in HF and NH4F. The deposition of Pb was made under ultrahigh vacuum conditions. There are differences between the barrier heights from the I-V and from the XPS measurements. The reasons seem to be a bad wettability of Pb to Si(111)1×1-H and a possible surface reconstruction of Si under the thicker metal film.

Ključne riječi

Hrčak ID:

299468

URI

https://hrcak.srce.hr/299468

Datum izdavanja:

2.5.1995.

Podaci na drugim jezicima: hrvatski

Posjeta: 363 *