Original scientific paper

Analysis of avalanche breakdown characteristics in complementary p-n junctions

Dimitrije Tjapkin ; Faculty of Electrical Engineering, University of Belgrade, 11000 Beograd, Yugoslavia
Milan Jevtić ; Institute of Physics, M. Gorkog 118, 11080 Zemun, Yugoslavia
Rifat Ramović ; Faculty of Electrical Engineering, University of Belgrade, 11000 Beograd, Yugoslavia

Abstract

A general analysis of the difference between avalanche breakdown-voltages ΔUB of complementary semiconductor p-n junctions, when the ratio αn/αp of coefficients of electron (αn) and hole (αp) ionization is the function of electric field (E) and temperature (T) is presented. The numerical results for ΔUB ( T, N, P) are given for Si complementary abrupt junctions. A particular attention is paid to temperature dependences: the dependence of the difference ΔUB of breakdown voltage on temperature was given and it was shown that changes can be considerable (up to 30%) especially for lower impurity concentrations.

Keywords

Hrčak ID:

329994

URI

https://hrcak.srce.hr/329994

Publication date:

7.1.1986.

Article data in other languages: serbian

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