Izvorni znanstveni članak
Analysis of avalanche breakdown characteristics in complementary p-n junctions
Dimitrije Tjapkin
; Faculty of Electrical Engineering, University of Belgrade, 11000 Beograd, Yugoslavia
Milan Jevtić
; Institute of Physics, M. Gorkog 118, 11080 Zemun, Yugoslavia
Rifat Ramović
; Faculty of Electrical Engineering, University of Belgrade, 11000 Beograd, Yugoslavia
Sažetak
A general analysis of the difference between avalanche breakdown-voltages ΔUB of complementary semiconductor p-n junctions, when the ratio αn/αp of coefficients of electron (αn) and hole (αp) ionization is the function of electric field (E) and temperature (T) is presented. The numerical results for ΔUB ( T, N, P) are given for Si complementary abrupt junctions. A particular attention is paid to temperature dependences: the dependence of the difference ΔUB of breakdown voltage on temperature was given and it was shown that changes can be considerable (up to 30%) especially for lower impurity concentrations.
Ključne riječi
Hrčak ID:
329994
URI
Datum izdavanja:
7.1.1986.
Posjeta: 324 *