Sažetak sa skupa
A two-dimensional analysis of carriers’ transport in the MOS structures
R. M. Ramović
; Faculty of Electrical Engineering and Institute of Physics, Belgrade, Yugoslavia
D. A. Tjapkin
; Faculty of Electrical Engineering and Institute of Physics, Belgrade, Yugoslavia
J. P. Marinković
; Faculty of Electrical Engineering and Institute of Physics, Belgrade, Yugoslavia
Sažetak
Starting from the carriers’ transport equation in semiconductors, a mathematical model was proposed for the two-dimensional analysis of the potential distribution (φ) and the carriers’ concentration in the semiconductor of a MOS transistor structure. The model proposed provides a possibility of a full analysis of the influence of particular parameters on the important quantities characterizing the real structures.
Ključne riječi
Hrčak ID:
340693
URI
Datum izdavanja:
15.12.1980.
Posjeta: 162 *