Original scientific paper
Schottky diodes fabricated on electrochemically-grown ZnO nanorods and microrods
A. E. Rakhshani
; Physics Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
J. Kokay
; Physics Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
A. Y. Bumajdad
; Chemistry Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
Abstract
Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless foil from a ZnCl2 route. Well-aligned and free-standing hexagonal nanorods with 100 nm diameter and closely-packed microrods with a diameter above 1 µm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report on the fabrication of high-quality AgSchottky diodes formed on the oxygen-treated (002) facets of microrods. Diodes with a large barrier height (1.1 eV), low saturation current density (1.3 pA/cm2 ) and high rectification factor (5 × 106 at ±3 V) were fabricated. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4 × 1014 cm−3 and 1.2 cm2V−1 s −1 , respectively.
Keywords
hexagonal ZnO nanorods; oxygen-treated (002) facets; high-quality AgSchottky diodes; high rectification factor; large barrier height; low saturation current density
Hrčak ID:
302736
URI
Publication date:
2.5.2010.
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