Meeting abstract
Nonlinearity of the Piezoresistive Effect of p-Type Silicon Diffused Layers with High Surface Concentration
Jovan Matovic
; Institute of Chemistry, Technology and Metalurgy, Institute of Microelectronic Technologies and Single Crystals, Beograd, Njegoseva 12, Yugoslavia
Zoran Djuric
; Institute of Chemistry, Technology and Metalurgy, Institute of Microelectronic Technologies and Single Crystals, Beograd, Njegoseva 12, Yugoslavia
Abstract
In this work we present results of measurement of piezoresistivity coefficients of <100> oriented silicon with high boron dopant concentrations. An nonlinear approximative expression has been derivated, that can treat piezoresistance effect quantitavely. The results of this work were used to discuss the nonlinearity of integrated piezoresistive bridge pressure sensors, in which the piezoresistors were obtained by diffusion of boron into silicon diaphragm.
Keywords
Hrčak ID:
339951
URI
Publication date:
20.12.1989.
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